GaiN for Gallium Nitride

Specially designed to optimize the polishing process in the chemical mechanical planarization (CMP) of GaN wafers, Saint-Gobain Surface Conditioning's GaiN 300 is a patent-pending nano abrasive slurry that reduces overall processing time by more than half. Leveraging our extensive material platform and formulation expertise, Saint-Gobain engineered a slurry that combines high material removal rate (MRR) with an excellent surface finish in challenging GaN wafer polishing applications.
GaiN for Gallium Nitride


Saint-Gobain GaiN CMP slurry completely eliminates scratches and pitting across the entire surface of the wafer by lowering the surface roughness to less than 2 Angstroms as measured by Atomic Force Microscope (AFM). GaiN 300 achieves an EPI-ready surface on both 2-inch and 4-inch GaN wafers. 

With an exceptional material removal rate, GaiN 300 CMP slurry is four times faster than competitive products and results in less damage to the sub-surface.

Benefits:

  • Outstanding polishing speed
  • Excellent surface finish (<2 Angstroms) with no scratches or pits
  • Very stable dispersion properties
  • Ready-to-use slurry
  • ISO Certified for consistent quality
  • Uniform surface quality across the entire wafer surface
  • Knowledgeable application engineers available for technical support

GaiN 500 is our newly developed slurry for Gallium Nitride CMP without permanganate.