GaiN™ Wafer Polishing
Faster Polishing with Fewer Defects
As the demand grows for GaiN™ substrates used in power electronics, laser diodes and LEDs, so does the need for optimal surface preparation of epi-ready wafers. Saint-Gobain Surface Conditioning has taken the lead in developing innovative solutions for chemical mechanical planarization polishing in demanding GaiN™ surface finishing applications.
Utilizing our unique expertise in combining particles and chemistries, Saint-Gobain created a nano abrasive slurry specifically designed to optimize the CMP polishing process of GaiN™ wafers. Our revolutionary product offers outstanding polishing speed and an exceptional removal rate that cuts processing time in half while producing a defect-free wafer surface primed for epi growth.
Saint-Gobain engineers are currently working on a pre-polishing slurry that will further optimize the GaiN™ polishing process. Stay tuned for more information on this exciting innovation.
GaiN™ CMP 200 Polishing Slurry
A patent-pending nano abrasive slurry, Saint-Gobain GaiN™ 200 combines outstanding polishing speed with an excellent surface finish. By lowering surface roughness to less than 2 Angstroms (as measured by Atomic Force Microscope), GaiN™ 200 eliminates scratches and pitting across the entire surface, achieving an epi-ready surface on 2-inch and 4-inch GaiN™ wafers.
GaiN 200™ slurry offers on outstanding material removal rate that drastically reduces CMP polishing time and processing time. It’s four times faster than the top competitive products and produces a smooth, scratch-free surface with less stress.
