Specially designed to optimize the polishing process in the chemical mechanical planarization (CMP) of GaN wafers, Saint-Gobain Surface Conditioning's GaiN 200 is a patent-pending nano abrasive slurry that reduces overall processing time by more than half. Leveraging our extensive material platform and formulation expertise, Saint-Gobain engineered a slurry that combines high material removal rate (MRR) with an excellent surface finish in challenging GaN wafer polishing applications.
Saint-Gobain GaiN CMP slurry completely eliminates scratches and pitting across the entire surface of the wafer by lowering the surface roughness to less than 2 Angstroms as measured by Atomic Force Microscope (AFM). GaiN 200 achieves an EPI-ready surface on both 2-inch and 4-inch GaN wafers.
With an exceptional material removal rate, GaiN 200 CMP slurry is four times faster than competitive products and results in less damage to the sub-surface.