GaN Wafer Polishing
Faster Polishing with Fewer Defects
As the demand grows for GaN substrates used in power electronics, laser diodes and LEDs, so does the need for optimal surface preparation of epi-ready wafers. Saint-Gobain Surface Conditioning has taken the lead in developing innovative solutions for chemical mechanical planarization polishing in demanding GaN surface finishing applications.
Utilizing our unique expertise in combining particles and chemistries, Saint-Gobain created a nano abrasive slurry specifically designed to optimize the CMP polishing process of GaN wafers. Our revolutionary product offers outstanding polishing speed and an exceptional removal rate that cuts processing time in half while producing a defect-free wafer surface primed for epi growth.
Saint-Gobain engineers are currently working on a pre-polishing slurry that will further optimize the GaN polishing process. Stay tuned for more information on this exciting innovation.
GaiN CMP 200 Polishing Slurry
A patent-pending nano abrasive slurry, Saint-Gobain GaiN 200 combines outstanding polishing speed with an excellent surface finish. By lowering surface roughness to less than 2 Angstroms (as measured by Atomic Force Microscope), GaiN 200 eliminates scratches and pitting across the entire surface, achieving an epi-ready surface on 2-inch and 4-inch GaN wafers.
GaiN 200 slurry offers on outstanding material removal rate that drastically reduces CMP polishing time and processing time. It’s four times faster than the top competitive products and produces a smooth, scratch-free surface with less stress.